Open this publication in new window or tab >> Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China; Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Material Science. Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China; Department of Physics, Harvard University, Cambridge, MA 02138, USA; Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Material Science. Department of Materials Science, Saarland University, Saarbrücken D-66123, Germany.
Key Laboratory of Photochemistry, Institute of Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China;Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Key Laboratory of Photochemistry, Institute of Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.
Key Laboratory of Photochemistry, Institute of Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.
Baikov Institute of Metallurgy and Materials Science, Moscow 119334, Russia.
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
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2022 (English) In: National Science Review, ISSN 2095-5138, Vol. 9, no 1, article id nwab140Article in journal (Refereed) Published
Abstract [en] Carbon is one of the most fascinating elements due to its structurally diverse allotropic forms stemming from its bonding varieties (sp, sp2, and sp3). Exploring new forms of carbon has always been the eternal theme of scientific research. Herein, we report the amorphous (AM) carbon materials with high fraction of sp3 bonding recovered from compression of fullerene C60 under high pressure and high temperature previously unexplored. Analysis of photoluminescence and absorption spectra demonstrates that they are semiconducting with a bandgap range of 1.5–2.2 eV, comparable to that of widely used amorphous silicon. Comprehensive mechanical tests demonstrate that the synthesized AM-III carbon is the hardest and strongest amorphous material known so far, which can scratch diamond crystal and approach its strength. The produced AM carbon materials combine outstanding mechanical and electronic properties, and may potentially be used in photovoltaic applications that require ultrahigh strength and wear resistance.
Place, publisher, year, edition, pages
Oxford University Press, 2022
Keywords amorphous carbon, ultrahard, ultrastrong, semiconductor, phase transition
National Category
Condensed Matter Physics
Research subject
Experimental Physics
Identifiers urn:nbn:se:ltu:diva-88295 (URN) 10.1093/nsr/nwab140 (DOI) 000754318600009 () 35070330 (PubMedID) 2-s2.0-85128804424 (Scopus ID)
Note Validerad;2022;Nivå 2;2022-01-24 (johcin)
2021-12-132021-12-132025-01-08 Bibliographically approved