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Lindahl, K. B., Zachrisson, A., Wiklund, R., Matti, S., Fjellborg, D., Johansson, A. & Elenius, L. (2016). Konflikter om gruvetablering: Lokalsamhällets aktöreroch vägar till hållbarhet : slutrapport. Luleå: Länsstyrelsen Norrbotten
Open this publication in new window or tab >>Konflikter om gruvetablering: Lokalsamhällets aktöreroch vägar till hållbarhet : slutrapport
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2016 (Swedish)Report (Other academic)
Abstract [sv]

Gruvprospektering och gruvetablering kan ge upphov tilllokala konflikter. Syftet med den här studien är att undersökahur berörda aktörer och medborgare ser på fråganom framtida mineralutvinning och gruvetablering, vilketutrymme som finns för lokalt deltagande och inflytandei politik och regelverk, samt möjligheterna att hanteraeventuella konflikter med hjälp av dialog och samråd. Vihar analyserat tre gruvetableringsprocesser på tre olikaplatser i det fjällnära området: järnbrytning i Gállok/Kallak(Jokkmokks kommun), nickelutvinning i Rönnbäck/Rönnbäcken (Storumans kommun) samt guld, koppar ochjärnbrytning i Rakkuri (Kiruna kommun).

Place, publisher, year, edition, pages
Luleå: Länsstyrelsen Norrbotten, 2016. p. 107
Series
Länsstyrelsens rapportserie ; 2016.2
National Category
Political Science
Research subject
Political Science
Identifiers
urn:nbn:se:ltu:diva-61812 (URN)
Available from: 2017-02-03 Created: 2017-02-03 Last updated: 2018-05-22Bibliographically approved
Abadei, S., Gevorgian, S., Kugler, V., Helmersson, U. & Andreasson, J. (2001). Microwave properties of tunable capacitors basee on magnetron sputtered ferroelectric Na0.5K0.5NbO3 film on low and high resistivity silicon substrates (ed.). Integrated Ferroelectrics, 39(1-4), 359-366
Open this publication in new window or tab >>Microwave properties of tunable capacitors basee on magnetron sputtered ferroelectric Na0.5K0.5NbO3 film on low and high resistivity silicon substrates
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2001 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, E-ISSN 1607-8489, Vol. 39, no 1-4, p. 359-366Article in journal (Refereed) Published
Abstract [en]

In this work, small signal DC voltage dependent dielectric permittivity, loss tangent, and tuneability of magnetron sputtered epitaxial Na0.5K0.5NO3 films are studied experimentally. (100)-oriented Na0.5K0.5NbO3 films are deposited onto SiO2-buffered CMOS grade low resistivity (p = 10-20 cm) and high resistivity (p = 15-45 kcm) silicon substrates. Planar capacitors with 2 or 4 m gaps between electrodes have been fabricated on top of ferroelectric films. These devices have been characterized in the frequency range 1.0 MHz to 50 GHz at temperatures 30 - 300K. Na0.5K0.5NbO3/SiO2/Si structures on high resistivity silicon substrate exhibit C-V performances typical for Metal-Insulator- Semiconductor (MIS) capacitors. At low frequencies, f 1.0 GHz, the large tuneability and large losses are associated with the MIS structure, while at higher microwave frequencies the tuneability is mainly associated with the ferroelectric, film. At 1.0 MHz and room temperature, the tuneability of Na0.5K0.5NbO3/SiO2/Si structures more than 90%, reducing to 10-15 % at 50 GHz. The losses decrease with increasing the DC bias and frequency. A Q-factor more than 15 at 50 GHz is observed. The dielectric permittivity of the Na0.5K0.5NbO3 film is in the range 50-150 at frequencies 0.045-50 GHz. On low resistivity substrate the performance of Na0.5K0.5NbO3 films is completely screened by the high losses in silicon, and the tuneability is negligible

National Category
Other Materials Engineering
Research subject
Engineering Materials
Identifiers
urn:nbn:se:ltu:diva-5491 (URN)39a9bce0-97df-11de-8da0-000ea68e967b (Local ID)39a9bce0-97df-11de-8da0-000ea68e967b (Archive number)39a9bce0-97df-11de-8da0-000ea68e967b (OAI)
Note

Validerad; 2001; 20090902 (andbra)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-05-22Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0001-7587-1546

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