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N2 and N4 optical transitions in diamond: A breakdown of the vacancy model
Department of Physics, University of Exeter, Exeter, United Kingdom.
Department of Physics, University of Exeter, Exeter, United Kingdom.
Department of Physics, University of Newcastle upon Tyne, Newcastle, United Kingdom.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
1997 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 56, no 4, p. 1654-1656Article in journal (Refereed) Published
Abstract [en]

The vacancy model for impurity vacancy defects in semiconductors assumes that the ground and low-energy excited states are derivable from the four sp3 hybrid orbitals on atoms bordering the vacancy. There are many cases where this model works but we describe here a counterexample concerning the lowest excited state of the [V-N3] defect in diamond. It is shown that a shallow electron trap, localized outside the vacancy, is involved in the first excited state and responsible for the N2 and N4 optical bands associated with the defect.

Place, publisher, year, edition, pages
1997. Vol. 56, no 4, p. 1654-1656
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-10222DOI: 10.1103/PhysRevB.56.R1654ISI: A1997XY36600003Scopus ID: 2-s2.0-0642272763Local ID: 8fb8d150-151a-11dd-b7d2-000ea68e967bOAI: oai:DiVA.org:ltu-10222DiVA, id: diva2:983162
Note

Godkänd; 1997; 20080428 (ysko)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2022-03-04Bibliographically approved

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Öberg, Sven

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