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E center in silicon has a donor level in the band gap
Institute of Physics and Astronomy, University of Aarhus.
Institut d'Electronique du Solide et des Systèmes, CNRS/ULP, Strasbourg.
Institute of Physics and Astronomy, University of Aarhus.
Institute of Physics and Astronomy, University of Aarhus.
Vise andre og tillknytning
2006 (engelsk)Inngår i: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 97, nr 10, s. 106402/1-106402/4Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

It has been an accepted fact for more than 40 years that the E center in Si (the group-V impurity-vacancy pair)-one of the most studied defects in semiconductors-has only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction band. We now demonstrate that it has a second level, situated in the lower half of the band gap at 0.27 eV above the valence band. The existence of this level, having a donor character, is disclosed by a combination of different transient-capacitance techniques and electronic-structure calculations. The finding seriously questions some diffusion-modeling approaches performed in the past.

sted, utgiver, år, opplag, sider
2006. Vol. 97, nr 10, s. 106402/1-106402/4
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Identifikatorer
URN: urn:nbn:se:ltu:diva-4003DOI: 10.1103/PhysRevLett.97.106402ISI: 000240384300041Scopus ID: 2-s2.0-33748550698Lokal ID: 1db0aad0-c357-11db-9ea3-000ea68e967bOAI: oai:DiVA.org:ltu-4003DiVA, id: diva2:976865
Merknad

Validerad; 2006; 20070214 (kani)

Tilgjengelig fra: 2016-09-29 Laget: 2016-09-29 Sist oppdatert: 2018-07-10bibliografisk kontrollert

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