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Tailoring of silicon crystals for relativistic-particle channeling
University of Ferrara.
University of Ferrara.
University of Ferrara.
University of Ferrara.
Vise andre og tillknytning
2005 (engelsk)Inngår i: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 234, nr 1-2, s. 40-46Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In the last years, the research on channeling of relativistic particles has progressed considerably. A significant contribution has been provided by the development of techniques for quality improvement of the crystals. In particular, a planar etching of the surfaces of the silicon crystals proved useful to remove the superficial layer, which is a region very rich in imperfections, in turn leading to greater channeling efficiency. Micro-fabrication techniques, borrowed from silicon technology, may also be useful: micro-indentation and deposition of tensile or compressive layers onto silicon samples allow one to impart an even curvature to the samples. In this way, different topologies may be envisaged, such as a bent crystal for deflection of protons and ions or an undulator to force coherent oscillations of positrons and electrons. © 2005 Elsevier B.V. All rights reserved.

sted, utgiver, år, opplag, sider
2005. Vol. 234, nr 1-2, s. 40-46
Emneord [en]
Channeling, Micromachining, Surface treatments
HSV kategori
Forskningsprogram
Experimentell fysik
Identifikatorer
URN: urn:nbn:se:ltu:diva-5150DOI: 10.1016/j.nimb.2005.01.008ISI: 000230191100006Scopus ID: 2-s2.0-19944406525Lokal ID: 32dccff6-d053-44ea-8b07-ef62685e33afOAI: oai:DiVA.org:ltu-5150DiVA, id: diva2:978024
Merknad

Upprättat; 2005; 20141216 (albvom)

Tilgjengelig fra: 2016-09-29 Laget: 2016-09-29 Sist oppdatert: 2018-10-04bibliografisk kontrollert

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Vomiero, Alberto

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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

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