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Straight and kinked 90° partial dislocations in diamond and 3C-SiC
Theoretische Physik, Universität Paderborn.
School of Physics, University of Exeter.
School of Physics, University of Exeter.
CPES, University of Sussex, Falmer, Brighton.
Vise andre og tillknytning
2002 (engelsk)Inngår i: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 14, nr 48, s. 12741-12747Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Density-functional based calculations are used to investigate low energy core structures of 90° partial dislocations in diamond and 3C-SiC. In both materials dislocation glide is analysed in terms of kink formation and migration and the fundamental steps to kink migration are investigated. We find the C terminated core structure in SiC to be more mobile than the Si core. However, the Si partial is electrically active and this opens the possibility of recombination-enhanced glide under ionizing conditions or an enhanced mobility in doped material.

sted, utgiver, år, opplag, sider
2002. Vol. 14, nr 48, s. 12741-12747
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URN: urn:nbn:se:ltu:diva-15154DOI: 10.1088/0953-8984/14/48/311ISI: 000180091100012Scopus ID: 2-s2.0-0037122170Lokal ID: ea2f3260-c006-11db-834c-000ea68e967bOAI: oai:DiVA.org:ltu-15154DiVA, id: diva2:988127
Merknad
Validerad; 2002; 20070219 (kani)Tilgjengelig fra: 2016-09-29 Laget: 2016-09-29 Sist oppdatert: 2018-07-10bibliografisk kontrollert

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