Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Preparation of Na0.5K0.5NbO3/La0.6Sr 0.2Mni.2O3/LaAIO3 thin film structures by pulsed laser deposition
Department of Condensed Matter Physics, Royal Institute of Technology.
Department of Condensed Matter Physics, Royal Institute of Technology.
Department of Condensed Matter Physics, Royal Institute of Technology.
1999 (engelsk)Inngår i: Multicomponent oxide films for electronics: symposium held April 6 - 8, 1999, San Francisco, California, U.S.A ; [contains papers presented at Symposium BB, Multicomponent oxide films for electronics held at the 1999 MRS Spring Meeting] / [ed] Marilyn E. Hawley, Warrendale, Pa: Materials Research Society, 1999, s. 149-154Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

We report on ferroelectric/giant magnetoresistive Nao.sKo.sNbCVLao.oSrojMniO} (NKN/LSMO) heterostructures gro\vn onto LaAlOj (001) single crystal using KrF pulsed laser ablation of stoichiometric ceramic target. Main processing parameters have been optimized to obtain smooth LSMO template layer, avoid NKN-LSMO interdiffusion, preserve NKN stoichiometry against the lost of volatile potassium and sodium and achieve reasonable reliability of NKN film performance. X-ray diffraction 0- 20 scans and rocking curves evidence for single-phase content and high c-axis orientation both in template LSMO and top NKN layers. Ferroelectric measurements yield remnant polarization P, of 1.5 (.iC/cm2 and spontaneous polarization Ps of 7 jiC/cm2 at electric field strength of 130 kV/cm. At room temperature, dielectric permittivity e' and dissipation factor tancJhave been found to vary from 595 to 555 and 0.046 to 0.029 respectively in the frequency range of 0.4 to 20 kHz. At 10 kHz dielectric permittivity linearly increases from 410 to 650 in the temperature range 77 K to 415 K while the dissipation factor below 320 K does not exceed 3%

sted, utgiver, år, opplag, sider
Warrendale, Pa: Materials Research Society, 1999. s. 149-154
Serie
Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 574
HSV kategori
Forskningsprogram
Polymera konstruktionsmaterial; Materialteknik
Identifikatorer
URN: urn:nbn:se:ltu:diva-27302Scopus ID: 33750847675Lokal ID: 0b6df8b0-4063-11de-bc0c-000ea68e967bISBN: 1558994815 (tryckt)OAI: oai:DiVA.org:ltu-27302DiVA, id: diva2:1000485
Konferanse
Symposium BB, Multicomponent oxide films for electronics : 06/04/1999 - 08/04/1999
Merknad
Godkänd; 1999; 20090514 (ysko)Tilgjengelig fra: 2016-09-30 Laget: 2016-09-30 Sist oppdatert: 2017-11-25bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Scopus

Personposter BETA

Lindbäck, Ture

Søk i DiVA

Av forfatter/redaktør
Lindbäck, Ture

Søk utenfor DiVA

GoogleGoogle Scholar

isbn
urn-nbn

Altmetric

isbn
urn-nbn
Totalt: 81 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf