First principles study of hydrogen-induced decoupling of epitaxial graphene from SiC substrates
2011 (English)In: Physics, Chemistry and Applications of Nonostructures: Proceedings of the International Conference Nanomeeting-2011 : reviews and short notes : Minsk, Belarus, 24-27 May 2011 / [ed] Victor E. Borisenko, Singapore: World Scientific Publishing Co Pte Ltd , 2011, p. 311-314Conference paper, Published paper (Refereed)
Abstract [en]
Density functional theory calculations have been used to investigate possible mechanisms of hydrogen-induced decoupling of graphene from SiC(0001). The results suggest that hydrogen atoms reach SiC surface through extended defects in graphene layers and then migrate and passivate bonds on the SiC surface
Place, publisher, year, edition, pages
Singapore: World Scientific Publishing Co Pte Ltd , 2011. p. 311-314
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-27602Scopus ID: 2-s2.0-84874703785Local ID: 117d6980-8f89-4153-828c-2d9dd1fd4d0cISBN: 9789814343893 (print)OAI: oai:DiVA.org:ltu-27602DiVA, id: diva2:1000789
Conference
International Conference on Physics, Chemistry and Applications of Nanostructures : 24/05/2011 - 27/05/2011
Note
Godkänd; 2011; 20130318 (andbra)
2016-09-302016-09-302021-03-09Bibliographically approved