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Density functional based modelling of 30° partial dislocations in SiC
Department of Physics, Faculty of Science, University of Paderborn.
School of Physics, University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
Department of Physics, University of Newcastle.
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2004 (English)In: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003, Stafa-Zuerich: Trans Tech Publications Inc., 2004, Vol. 1, p. 453-456Conference paper, Published paper (Refereed)
Abstract [en]

Experiment has shown that 4H- and 6H-SiC pin diodes degrade rapidly during forward biased operation. This degradation is accompanied by the formation and expansion of stacking faults in the basal plane. It is believed that the observed rapid stacking fault growth is due to a recombination-enhanced dislocation glide (REDG) mechanism at the bordering partial dislocations. In our work we investigate the structure and properties of basal plane 30° Shockley partials in SiC by means of density functional based calculations. Barriers to their glide motion, and thus the expansion of the accompanying stacking fault is modelled in a process involving the formation and subsequent migration of kinks in the dislocation. In combination with an analysis of the electronic structure of the partials and stacking faults, this allows an identification of those types of partials which will be affected by the REDG mechanism in this model.

Place, publisher, year, edition, pages
Stafa-Zuerich: Trans Tech Publications Inc., 2004. Vol. 1, p. 453-456
Series
Materials Science Forum, ISSN 0255-5476 ; 457
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-30689Local ID: 495a1170-c349-11db-9ea3-000ea68e967bISBN: 0-87849-943-1 (print)OAI: oai:DiVA.org:ltu-30689DiVA, id: diva2:1003918
Conference
International Conference on Silicon Carbide and Related Materials : 05/10/2003 - 10/10/2003
Note
Validerad; 2004; 20070223 (kani)Available from: 2016-09-30 Created: 2016-09-30 Last updated: 2017-11-25Bibliographically approved

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http://www.scientific.net/0-87849-943-1/453/

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Öberg, Sven

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  • apa
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