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In-depth photocarrier dynamics in a barrier variable iron-oxide and vertically aligned reduced-graphene oxide composite
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Material Science.ORCID iD: 0000-0002-3956-444x
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Material Science. Division of Surface and Corrosion Science, Department of Chemistry, School of Engineering Sciences in Chemistry, Biotechnology and Health, KTH Royal Institute of Technology, Stockholm, Sweden.ORCID iD: 0000-0001-6877-9282
Nanostructure Physics, KTH Royal Institute of Technology, 114 19, Stockholm, Sweden; Intermodulation Products AB, 823 93, Segersta, Sweden.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Material Science.ORCID iD: 0000-0003-1785-7177
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2022 (English)In: NPJ 2D MATERIALS AND APPLICATIONS, E-ISSN 2397-7132, Vol. 6, no 1, article id 57Article in journal (Refereed) Published
Abstract [en]

A key requirement for semiconductors operating in light-harvesting devices, is to efficiently convert the absorbed photons to electronic excitations while accommodating low loss pathways for the photogenerated carrier’s transport. The quality of this process corresponds to different relaxation phenomena, yet primarily it corresponds to minimized thermalization of photoexcited carriers and maximum transfer of electron-hole pairs in the bulk of semiconductor. However, several semiconductors, while providing a suitable platform for light-harvesting applications, pose intrinsic low carrier diffusion length of photoexcited carriers. Here we report a system based on a vertical network of reduced graphene oxide (rGO) embedded in a thin-film structure of iron oxide semiconductor, intended to exploit fast electron transport in rGO to increase the photoexcited carrier transfer from the bulk of the semiconductor to rGO and then to the external circuit. Using intermodulation conductive force microscopy, we locally monitored the fluctuation of current output, which is the prime indication of successful charge transfer from photoexcited semiconductor to rGO and efficient charge collection from the bulk of the semiconductor. We reveal the fundamental properties of vertical rGO and semiconductor junction in light-harvesting systems that enable the design of new promising materials for broad-band optical applications.

Place, publisher, year, edition, pages
Springer Nature, 2022. Vol. 6, no 1, article id 57
National Category
Physical Chemistry
Research subject
Experimental Physics
Identifiers
URN: urn:nbn:se:ltu:diva-93220DOI: 10.1038/s41699-022-00333-5ISI: 000849458700001Scopus ID: 2-s2.0-85137588426OAI: oai:DiVA.org:ltu-93220DiVA, id: diva2:1699223
Funder
Luleå University of TechnologyThe Kempe FoundationsEU, Horizon 2020, 65400Knut and Alice Wallenberg FoundationVinnova
Note

Validerad;2022;Nivå 2;2022-09-27 (joosat);

Funder: Swedish Foundations Consolidator Fellowship

Available from: 2022-09-27 Created: 2022-09-27 Last updated: 2022-09-27Bibliographically approved

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Gilzad Kohan, MojtabaDobryden, IlliaConcina, IsabellaVomiero, Alberto

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