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Piezospectroscopic analysis of the hydrogen-carbon complexes in silicon
Centre for Electronic Materials, University of Manchester.
Centre for Electronic Materials, University of Manchester.
Centre for Electronic Materials, University of Manchester.
Institute of Physics and Astronomy, University of Aarhus.
Vise andre og tillknytning
2001 (engelsk)Inngår i: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 308, s. 139-142Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We have observed the donor (Ec-0.22 eV) and acceptor (Ec-0.16 eV) levels related to hydrogen-carbon complexes in silicon. The donor level is only detected at low temperatures after proton implantation. This hydrogen-carbon complex irreversibly reconfigures at temperatures above 225 K to a configuration characterized by the acceptor level, which is stable up to room temperature. The same acceptor level is also observed after atomic hydrogen diffusion. We have used Laplace transform deep level transient spectroscopy (DLTS) to show the influence of uniaxial stress on the electron emission process and the effect of the stress-induced alignment for the acceptor state. The pattern of the Laplace DLTS peak splittings indicate a trigonal symmetry of the defect. First principles calculations were carried out on the hydrogen-carbon defects with a view of determining their electrical levels and stress response for comparison with the experimental results.

sted, utgiver, år, opplag, sider
2001. Vol. 308, s. 139-142
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URN: urn:nbn:se:ltu:diva-2957DOI: 10.1016/S0921-4526(01)00672-XISI: 000173660100034Scopus ID: 2-s2.0-4244059961Lokal ID: 0b439b40-c0e7-11db-834c-000ea68e967bOAI: oai:DiVA.org:ltu-2957DiVA, id: diva2:975812
Merknad
Validerad; 2001; 20070220 (kani)Tilgjengelig fra: 2016-09-29 Laget: 2016-09-29 Sist oppdatert: 2018-07-10bibliografisk kontrollert

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