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The effect of charge on kink migration at 90° partial dislocations in SiC
Max-Planck-Institut für Eisenforschung GmbH.
School of Physics, University of Exeter.
School of Physics, University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
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2005 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 202, no 5, p. 877-882Article in journal (Refereed) Published
Abstract [en]

SiC bipolar devices show a degradation under forward-biased operation which has been linked with a recombination enhanced motion of one of the two glide dislocations having either Si or C core atoms. We have carried out calculations of the core structures and dynamics of partial dislocations in 3C and 2H-SiC using the density functional based codes DFTB and AIMPRO. After in earlier theoretical work we reported on the structure, energetics and electronic activity of both of the Shockley partials, and on the formation and migration barriers of kinks, in this work we present first results on the effect of charge on the disloction kinks. The calculations give insights into the device degradation mechanism.

Place, publisher, year, edition, pages
2005. Vol. 202, no 5, p. 877-882
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-3026DOI: 10.1002/pssa.200460504ISI: 000228679200039Scopus ID: 2-s2.0-25444520266Local ID: 0c70f5d0-bd04-11db-9be7-000ea68e967bOAI: oai:DiVA.org:ltu-3026DiVA, id: diva2:975881
Note
Validerad; 2005; 20070215 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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