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The effect of charge on kink migration at 90° partial dislocations in SiC
Max-Planck-Institut für Eisenforschung GmbH.
School of Physics, University of Exeter.
School of Physics, University of Exeter.
Luleå tekniska universitet, Institutionen för teknikvetenskap och matematik, Matematiska vetenskaper.ORCID-id: 0000-0002-0292-1159
Vise andre og tillknytning
2005 (engelsk)Inngår i: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 202, nr 5, s. 877-882Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

SiC bipolar devices show a degradation under forward-biased operation which has been linked with a recombination enhanced motion of one of the two glide dislocations having either Si or C core atoms. We have carried out calculations of the core structures and dynamics of partial dislocations in 3C and 2H-SiC using the density functional based codes DFTB and AIMPRO. After in earlier theoretical work we reported on the structure, energetics and electronic activity of both of the Shockley partials, and on the formation and migration barriers of kinks, in this work we present first results on the effect of charge on the disloction kinks. The calculations give insights into the device degradation mechanism.

sted, utgiver, år, opplag, sider
2005. Vol. 202, nr 5, s. 877-882
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URN: urn:nbn:se:ltu:diva-3026DOI: 10.1002/pssa.200460504ISI: 000228679200039Scopus ID: 2-s2.0-25444520266Lokal ID: 0c70f5d0-bd04-11db-9be7-000ea68e967bOAI: oai:DiVA.org:ltu-3026DiVA, id: diva2:975881
Merknad
Validerad; 2005; 20070215 (kani)Tilgjengelig fra: 2016-09-29 Laget: 2016-09-29 Sist oppdatert: 2018-07-10bibliografisk kontrollert

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