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DC field dependent properties of Na0.5K0.5NbO₃/SiO₂/Si structures at millimeter-wave frequencies
Chalmers University of Technology.
Chalmers University of Technology.
Royal Institute of Technology.
Royal Institute of Technology.
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2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 78, no 13, p. 1900-1902Article in journal (Refereed) Published
Abstract [en]

Dielectric properties of laser-ablated 0.5-μm-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Ω cm) silicon SiO2/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-μm-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of Na0.5K0.5NbO3 films. The slot width between the electrodes is 2 or 4 μm. 13% capacitance change at 40 V dc bias and Q factor more than 15 are observed at 40 GHz, which makes the structure useful for applications in electrically tunable millimeter-wave devices

Place, publisher, year, edition, pages
2001. Vol. 78, no 13, p. 1900-1902
National Category
Other Materials Engineering
Research subject
Engineering Materials
Identifiers
URN: urn:nbn:se:ltu:diva-3894DOI: 10.1063/1.1353838ISI: 000167744000033Scopus ID: 2-s2.0-0035952785Local ID: 1be01820-6f66-11db-962b-000ea68e967bOAI: oai:DiVA.org:ltu-3894DiVA, id: diva2:976756
Note

Validerad; 2001; 20060917 (cira)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Lindbäck, Ture

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