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DC field dependent properties of Na0.5 K0.5 NbO3/SiO2/Si structures at millimeter-wave frequencies
Department of Microelectronics, Chalmers University of Technology, Gothenburg, Sweden.
Department of Microelectronics, Chalmers University of Technology, Gothenburg, Sweden;Core Unit Research Center, Ericsson Microwave Systems, Mölndal, Sweden.
Department of Condensed Matter Physics, Royal Institute of Technology, Stockholm, Sweden.
Department of Condensed Matter Physics, Royal Institute of Technology, Stockholm, Sweden.
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2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 78, no 13, p. 1900-1902Article in journal (Refereed) Published
Abstract [en]

Dielectric properties of laser-ablated 0.5-μm-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Ω cm) silicon SiO2/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-μm-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of Na0.5K0.5NbO3 films. The slot width between the electrodes is 2 or 4 μm. 13% capacitance change at 40 V dc bias and Q factor more than 15 are observed at 40 GHz, which makes the structure useful for applications in electrically tunable millimeter-wave devices

Place, publisher, year, edition, pages
2001. Vol. 78, no 13, p. 1900-1902
National Category
Other Materials Engineering
Research subject
Engineering Materials
Identifiers
URN: urn:nbn:se:ltu:diva-3894DOI: 10.1063/1.1353838ISI: 000167744000033Scopus ID: 2-s2.0-0035952785Local ID: 1be01820-6f66-11db-962b-000ea68e967bOAI: oai:DiVA.org:ltu-3894DiVA, id: diva2:976756
Note

Validerad; 2001; 20060917 (cira)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2022-01-13Bibliographically approved

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Lindbäck, Ture

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