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Intrinsic defects in CdTe and CdZnTe alloys
Swiss Federal Institute of Technology.
Swiss Federal Institute of Technology.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
University of Newcastle Upon Tyne.
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2009 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 404, no 23-24, p. 5019-5021Article in journal (Refereed) Published
Abstract [en]

The Cd vacancy (VCd) and Te anti-site (TeCd) are two dominant defects in CdTe and CdZnTe alloys grown in Terich conditions. We examine the properties of these two intrinsic defects in Cd1-xZnxTe alloys with x < 0:5 using first-principles calculations. It is shown that Cd vacancies become progressively more favourable with increasing Zn content, in contrast with Te anti-sites, which show the opposite behaviour, explaining the trend towards p-type conductivity in Cd1-xZnxTe.

Place, publisher, year, edition, pages
2009. Vol. 404, no 23-24, p. 5019-5021
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Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-4171DOI: 10.1016/j.physb.2009.08.251ISI: 000276029300143Scopus ID: 2-s2.0-74349128935Local ID: 211aafc0-9bb0-11de-a77c-000ea68e967bOAI: oai:DiVA.org:ltu-4171DiVA, id: diva2:977035
Note
Validerad; 2009; Bibliografisk uppgift: Proceedings of the 25th International Conference on Defects in Semiconductors; 20090907 (ysko)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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