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Dislocations in hexagonal and cubic GaN
University of Exeter.
University of Exeter.
University of Exeter.
University of Sussex.
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2000 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 12, p. 10223-10233Article in journal (Refereed) Published
Abstract [en]

The structure and electronic activity of several types of dislocations in both hexagonal and cubic GaN are calculated using first-principles methods. Most of the stoichiometric dislocations investigated in hexagonal GaN do not induce deep acceptor states and thus cannot be responsible for the yellow luminescence. However, it is shown that electrically active point defects, in particular gallium vacancies and oxygen-related defect complexes, can be trapped at the stress field of the dislocations and may be responsible for this luminescence. For cubic GaN, we find the ideal stoichiometric 60° dislocation to be electrically active and the glide set to be more stable than the shuffle. The dissociation of the latter is considered

Place, publisher, year, edition, pages
2000. Vol. 12, p. 10223-10233
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-7004DOI: 10.1088/0953-8984/12/49/322ISI: 000166039400023Scopus ID: 2-s2.0-0034499569Local ID: 5561efa0-2b2c-11dd-8657-000ea68e967bOAI: oai:DiVA.org:ltu-7004DiVA, id: diva2:979890
Note
Validerad; 2000; 20080526 (cira)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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