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Shallow thermal donor defects in silicon
University of Exeter.
University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
Technical University of Budapest.
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1996 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 77, no 5, p. 865-868Article in journal (Refereed) Published
Abstract [en]

An ab initio local density functional cluster program, aimpro, is used to examine nitrogen related shallow thermal donor defects in silicon. We find the bonding of oxygen with interstitial nitrogen in Ni- O2i to be almost "normal," but the O atoms move slightly out of their bond centered sites causing the deep donor level of Ni to become shallow. The defect has properties consistent with those experimentally observed for shallow thermal donors. We also find that a CiH- O2i defect has very similar electronic properties, and suggest that shallow thermal donors do not have a unique composition.

Place, publisher, year, edition, pages
1996. Vol. 77, no 5, p. 865-868
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-7881DOI: 10.1103/PhysRevLett.77.865ISI: A1996UY95200019Local ID: 64e6a8e0-1aaf-11dd-8c59-000ea68e967bOAI: oai:DiVA.org:ltu-7881DiVA, id: diva2:980771
Note
Godkänd; 1996; 20080505 (ysko)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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