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Two-step growth of high-quality nano-diamond films using CH 4/H 2 gas mixture
Department of High Tech Thin Films, School of Materials Science and Engineering, University of Science and Technology Beijing.
Department of High Tech Thin Films, School of Materials Science and Engineering, University of Science and Technology Beijing.ORCID iD: 0000-0003-4888-6237
Department of High Tech Thin Films, School of Materials Science and Engineering, University of Science and Technology Beijing.
Department of High Tech Thin Films, School of Materials Science and Engineering, University of Science and Technology Beijing.
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2007 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 81, no 5, p. 713-717Article in journal (Refereed) Published
Abstract [en]

Diamond films with fine grain size and good quality were successfully deposited on pure titanium substrate using a novel two-step growth technique in microwave plasma-assisted chemical vapor deposition (MWPCVD) system. The films were grown with varying the methane (CH4) concentration at the stage of bias-enhanced nucleation (BEN) and nano-diamond film deposition. It was found that nano-diamond nuclei were formed at a relatively high methane concentration, causing a secondary nucleation at the accompanying growth step. Nano-diamond film deposition on pure titanium was always very hard due to the high diffusion coefficient of carbon in Ti, the big difference between thermal expansion coefficients of diamond and Ti, the complex nature of the interlayer created during diamond deposition, and the difficulty in achieving very high nucleation density. A smooth and well-adhered nano-diamond film was successfully obtained on pure Ti substrate. Detailed experimental results on the synthesis, characterization and successful deposition of the nano-diamond film on pure Ti are discussed

Place, publisher, year, edition, pages
2007. Vol. 81, no 5, p. 713-717
National Category
Other Materials Engineering
Research subject
Engineering Materials
Identifiers
URN: urn:nbn:se:ltu:diva-8265DOI: 10.1016/j.vacuum.2006.09.015Local ID: 6bea99b8-14fb-4901-8701-b9f11622be8aOAI: oai:DiVA.org:ltu-8265DiVA, id: diva2:981156
Note
Upprättat; 2007; 20150416 (farakh)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2017-11-24Bibliographically approved

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