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Basal plane partial dislocations in silicon carbide
Department of Physics, Universität Paderborn.
School of Physics, University of Exeter.
Luleå tekniska universitet, Institutionen för teknikvetenskap och matematik, Matematiska vetenskaper.ORCID-id: 0000-0002-0292-1159
Department of Physics, University of Newcastle.
Vise andre og tillknytning
2003 (engelsk)Inngår i: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 340, s. 160-164Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Under operating conditions (forward bias) bipolar 4H- and 6H-SiC devices are known to degrade rapidly through stacking fault formation and expansion in the basal plane. It has been suggested that a recombination-enhanced dislocation glide (REDG) mechanism allows the bordering Shockley partial dislocations to overcome their barrier to glide motion and thus results in the observed stacking fault growth. In this work, we investigate the structure and properties of the participating Shockley partials by means of density functional-based atomistic calculations. Their glide motion is modelled in a process involving the formation and subsequent migration of kinks. This in combination with an analysis of the electronic structure of the partials allows an identification of those types which will be affected by the REDG mechanism.

sted, utgiver, år, opplag, sider
2003. Vol. 340, s. 160-164
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URN: urn:nbn:se:ltu:diva-9905DOI: 10.1016/j.physb.2003.09.046ISI: 000188300200027Scopus ID: 2-s2.0-0345873488Lokal ID: 89af87f0-bda4-11db-9be7-000ea68e967bOAI: oai:DiVA.org:ltu-9905DiVA, id: diva2:982844
Merknad

Validerad; 2003; 20070216 (kani)

Tilgjengelig fra: 2016-09-29 Laget: 2016-09-29 Sist oppdatert: 2018-07-10bibliografisk kontrollert

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