Evidence for H2* trapped by carbon impurities in siliconVisa övriga samt affilieringar
2001 (Engelska)Ingår i: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 308, s. 197-201Artikel i tidskrift (Refereegranskat) Published
Abstract [en]
Local mode spectroscopy and ab initio modelling are used to investigate two trigonal defects found in carbon-rich Si into which H had been in-diffused. Isotopic shifts with D and 13C are reported along with the effect of uniaxial stress. Ab initio modelling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si, respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed.
Ort, förlag, år, upplaga, sidor
2001. Vol. 308, s. 197-201
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Beräkningsmatematik
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Identifikatorer
URN: urn:nbn:se:ltu:diva-10091DOI: 10.1016/S0921-4526(01)00719-0ISI: 000173660100049Scopus ID: 2-s2.0-0035671565Lokalt ID: 8d6183a0-c0ea-11db-834c-000ea68e967bOAI: oai:DiVA.org:ltu-10091DiVA, id: diva2:983031
Anmärkning
Validerad; 2001; 20070220 (kani)
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