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Optical bands related to dislocations in Si
University of Exeter.
University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
Universität Paderborn.
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2000 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 12, p. 10123-10129Article in journal (Refereed) Published
Abstract [en]

First-principles calculations are used to investigate the interaction of self-interstitial aggregates with the 90° partial dislocation in Si. We find that I4 is bound to the line with an energy of around 3 eV. The defect causes deep levels to appear in the band gap and optical transitions between these levels may account for the luminescent bands relating to plastically deformed Si.

Place, publisher, year, edition, pages
2000. Vol. 12, p. 10123-10129
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-10289DOI: 10.1088/0953-8984/12/49/311ISI: 000166039400012Scopus ID: 2-s2.0-0034515011Local ID: 91577940-2b2b-11dd-8657-000ea68e967bOAI: oai:DiVA.org:ltu-10289DiVA, id: diva2:983231
Note
Validerad; 2000; 20080526 (cira)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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