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Light induced degradation in B doped Cz-Si solar cells
Department of Physics, I3N, University of Aveiro, Campus Santiago.
Department of Physics, I3N, University of Aveiro, Campus Santiago.
Department of Physics, I3N, University of Aveiro, Campus Santiago.
School of Physics, University of Exeter.
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2012 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 209, no 10, p. 1894-1897Article in journal (Refereed) Published
Abstract [en]

We analyse the formation energy of interstitial boron (Bi) and the properties of the defect resulting from its association with an oxygen dimer (BiO2i) to evaluate the possibility that it may be the slow-forming centre responsible for the light-induced degradation of B-doped Si solar cells. However, we find that the formation energy of Bi is too high, and therefore its concentration is negligible. Moreover, we find that the lowest energy form of BiO2i is a shallow donor, and the deep donor form is high in energy. Lowest energy structure of the BiO2i defect.

Place, publisher, year, edition, pages
2012. Vol. 209, no 10, p. 1894-1897
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Computational Mathematics
Research subject
Scientific Computing
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URN: urn:nbn:se:ltu:diva-11701DOI: 10.1002/pssa.201200196ISI: 000310282000012Scopus ID: 2-s2.0-84867503337Local ID: ab67d895-f267-42c5-b461-47cf16e249ceOAI: oai:DiVA.org:ltu-11701DiVA, id: diva2:984651
Note
Validerad; 2012; 20120808 (andbra)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Rayson, Mark

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