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Deep acceptors trapped at threading-edge dislocations in GaN
Department of Physics, University of Exeter, Exeter, United Kingdom; Technische Universität, Theoretische Physik III, Chemnitz, Germany.
Department of Physics, University of Exeter, Exeter, United Kingdom.
CPES, University of Sussex, Brighton, United Kingdom.
Technische Universität, Theoretische Physik III, Chemnitz, Germany.
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1998 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 58, no 19, p. 12571-12574Article in journal (Refereed) Published
Abstract [en]

Local-density-functional methods are used to examine the behavior of the oxygen defect, gallium vacancy, and related defect complexes trapped at threading-edge dislocations in GaN. These defects are found to be particularly stable at the core of the dislocation where oxygen sits twofold coordinated in a bridge position. VGa-ON is found to be a deep double acceptor, VGa-(ON)2 is a deep single acceptor, and VGa-(ON)3 at the dislocation core is electrically inactive. We suggest that the first two defects are responsible for a deep acceptor level associated with the midgap yellow luminescence band.

Place, publisher, year, edition, pages
1998. Vol. 58, no 19, p. 12571-12574
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-12134DOI: 10.1103/PhysRevB.58.12571ISI: 000077295500011Scopus ID: 2-s2.0-0000058033Local ID: b361e440-1388-11dd-b7d2-000ea68e967bOAI: oai:DiVA.org:ltu-12134DiVA, id: diva2:985084
Note

Godkänd; 1998; 20080426 (ysko)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2022-03-04Bibliographically approved

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Öberg, Sven

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