Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Microstructure/dielectric property relationship of low temperature synthesised (Na,K)NbOx thin films
Linköping universitet.
Linköping universitet.
Linköping universitet.
Linköping universitet.
Show others and affiliations
2004 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 262, no 1-4, p. 322-326Article in journal (Refereed) Published
Abstract [en]

Thin films of (Na,K)NbOx (NKN) were grown by reactive RF magnetron sputtering on polycrystalline Pt80Ir20 substrates, at relatively low growth temperatures between 300°C and 450°C. The results show that the electrical performance and the microstructure of the films are a strong function of the substrate temperature. X-ray diffraction of films grown up to 400°C revealed the formation of only one crystalline NKN-phase with a preferred (002)-orientation. However, a mixed orientation together with a secondary, paraelectric potassium niobate phase, were observed for NKN films deposited at 450°C. The differences in the microstructure explains the variations in the dielectric constants and losses: The single phase NKN films displayed a dielectric constant and a dielectric loss of 506 and 0.011, respectively, while the films with mixed phases exhibited values of 475 and 0.022, respectively. The possibility of fabricating NKN films with relatively high dielectric properties at low growth temperatures, as demonstrated here, is of high technological importance

Place, publisher, year, edition, pages
2004. Vol. 262, no 1-4, p. 322-326
National Category
Other Materials Engineering
Research subject
Engineering Materials
Identifiers
URN: urn:nbn:se:ltu:diva-12985DOI: 10.1016/j.jcrysgro.2003.10.035ISI: 000189098700050Scopus ID: 2-s2.0-0842330006Local ID: c231e4d0-6f78-11db-962b-000ea68e967bOAI: oai:DiVA.org:ltu-12985DiVA, id: diva2:985936
Note
Validerad; 2004; 20060917 (cira)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Authority records BETA

Lindbäck, Ture

Search in DiVA

By author/editor
Lindbäck, Ture
In the same journal
Journal of Crystal Growth
Other Materials Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 4 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf