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Calculations of electrical levels of deep centers: application to Au-H and Ag-H defects in silicon
University of Exeter.
University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
University of Newcastle Upon Tyne.
1999 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 82, no 10, p. 2111-2114Article in journal (Refereed) Published
Abstract [en]

First-principles local-density formalism cluster theory is used to determine the structure of Au- and Ag-hydrogen complexes in Si. The theory, with an empirical correction, is then applied to extract their donor and acceptor levels and these are compared with capacitance transient spectroscopic measurements. Assignments of these levels to specific H defects are then made. Models for the defects responsible for the neutralization of the electrical activity of the Au and Ag centers are proposed.

Place, publisher, year, edition, pages
1999. Vol. 82, no 10, p. 2111-2114
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-13437DOI: 10.1103/PhysRevLett.82.2111ISI: 000078959700026Local ID: ca81cd80-1387-11dd-b7d2-000ea68e967bOAI: oai:DiVA.org:ltu-13437DiVA, id: diva2:986390
Note
Godkänd; 1999; 20080426 (ysko)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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