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A theoretical study of copper contaminated dislocations in silicon
School of Physics, University of Exeter.
School of Physics, University of Exeter.
Luleå tekniska universitet, Institutionen för teknikvetenskap och matematik, Matematiska vetenskaper.ORCID-id: 0000-0002-0292-1159
School of Natural Science, University of Newcastle upon Tyne.
Vise andre og tillknytning
2008 (engelsk)Inngår i: Solid State Phenomena, ISSN 1012-0394, E-ISSN 1662-9779, Vol. 131-133, s. 259-264Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Recently, the interaction of copper with dislocations in p-type Si/SiGe/Si structures has been investigated experimentally and a new dislocation related DLTS-level at Ev +0.32 eV was detected after intentional contamination with copper. To determine the origin of this newly detected level, in this work we present first density functional calculations of substitutional copper at 90◦ and 30◦ partial dislocations in silicon. Defect-dislocation binding energies are determined and electrical gap levels are calculated and compared with the experimental data. As a result, the observed level at Ev + 0.32 eV is tentatively assigned to the single acceptor level of substitutional copper at the dislocation.

sted, utgiver, år, opplag, sider
2008. Vol. 131-133, s. 259-264
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URN: urn:nbn:se:ltu:diva-13685Lokal ID: cf434a50-3ba1-11dd-8e42-000ea68e967bOAI: oai:DiVA.org:ltu-13685DiVA, id: diva2:986638
Merknad
Validerad; 2008; 20080616 (ysko)Tilgjengelig fra: 2016-09-29 Laget: 2016-09-29 Sist oppdatert: 2017-11-24bibliografisk kontrollert

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http://www.scientific.net/3-908451-43-4/259/

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