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Controlled growth and sensing properties of in2O3 nanowires
CNR-INFM SENSOR Laboratory.ORCID iD: 0000-0003-2935-1165
CNR-INFM SENSOR Laboratory.
CNR-INFM SENSOR Laboratory.
CNR-INFM SENSOR Laboratory.
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2007 (English)In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 7, no 12, p. 2500-2504Article in journal (Refereed) Published
Abstract [en]

Single-crystalline nanowires of indium oxide were produced under controlled conditions via condensation from the vapor phase. Seeding of the substrate through dispersion of metallic indium nanoparticles was proven effective in promoting a nanowire nucleation driven by the vapor-solid process. Nanowires with as small an average lateral dimension as 110 nm were produced, allowing the exploitation of size reduction effects on the electrical properties and the response to gases. Preparation and microstructural and electrical characterization of nanowires are presented, and the peculiarities of these innovative structures for the development of nanodevices are highlighted. © 2007 American Chemical Society.

Place, publisher, year, edition, pages
2007. Vol. 7, no 12, p. 2500-2504
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Experimental Physics
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URN: urn:nbn:se:ltu:diva-13704DOI: 10.1021/cg070209pScopus ID: 2-s2.0-37549041958Local ID: cfc7ad18-7ecc-4e0c-95be-59082be70e55OAI: oai:DiVA.org:ltu-13704DiVA, id: diva2:986657
Note

Upprättat; 2007; 20141211 (albvom)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2019-08-20Bibliographically approved

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Vomiero, Alberto

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