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Photo-dissociation of hydrogen passivated dopants in gallium arsenide
National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork.
National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork.
National Microelectronics Research Centre (NMRC), University College, Lee Maltings, Prospect Row, Cork.
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2002 (Engelska)Ingår i: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 186, nr 1-4, s. 234-239Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si Ga-H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of C As-H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds.

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2002. Vol. 186, nr 1-4, s. 234-239
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URN: urn:nbn:se:ltu:diva-14014DOI: 10.1016/S0168-583X(01)00949-1Lokalt ID: d5619ce7-1837-4b61-972b-7f037d6cdb5dOAI: oai:DiVA.org:ltu-14014DiVA, id: diva2:986968
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Upprättat; 2002; 20130304 (andbra)Tillgänglig från: 2016-09-29 Skapad: 2016-09-29 Senast uppdaterad: 2017-11-24Bibliografiskt granskad

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Larsson, Andreas

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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

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