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Straight and kinked 90° partial dislocations in diamond and 3C-SiC
Theoretische Physik, Universität Paderborn.
School of Physics, University of Exeter.
School of Physics, University of Exeter.
CPES, University of Sussex, Falmer, Brighton.
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2002 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 14, no 48, p. 12741-12747Article in journal (Refereed) Published
Abstract [en]

Density-functional based calculations are used to investigate low energy core structures of 90° partial dislocations in diamond and 3C-SiC. In both materials dislocation glide is analysed in terms of kink formation and migration and the fundamental steps to kink migration are investigated. We find the C terminated core structure in SiC to be more mobile than the Si core. However, the Si partial is electrically active and this opens the possibility of recombination-enhanced glide under ionizing conditions or an enhanced mobility in doped material.

Place, publisher, year, edition, pages
2002. Vol. 14, no 48, p. 12741-12747
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-15154DOI: 10.1088/0953-8984/14/48/311ISI: 000180091100012Scopus ID: 2-s2.0-0037122170Local ID: ea2f3260-c006-11db-834c-000ea68e967bOAI: oai:DiVA.org:ltu-15154DiVA, id: diva2:988127
Note
Validerad; 2002; 20070219 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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