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Electrical activity of carbon-hydrogen centers in Si
Centre for Electronic Materials, University of Manchester.
Centre for Electronic Materials, University of Manchester.
Centre for Electronic Materials, University of Manchester.
Institute of Physics and Astronomy, University of Aarhus.
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2002 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 66, no 23, p. 235205-1Article in journal (Refereed) Published
Abstract [en]

The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.

Place, publisher, year, edition, pages
2002. Vol. 66, no 23, p. 235205-1
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-16144DOI: 10.1103/PhysRevB.66.235205ISI: 000180279400061Local ID: fbc554d0-c003-11db-834c-000ea68e967bOAI: oai:DiVA.org:ltu-16144DiVA, id: diva2:989120
Note
Validerad; 2002; 20070219 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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