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Breakdown of the vacancy model for impurity-vacancy defects in diamond
Department of Physics, University of Exeter.
Department of Physics, University of Exeter.
Department of Physics, University of Newcastle.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
1997 (English)In: Defects in semiconductors: proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997 / [ed] Gordon Davies, Trans Tech Publications Inc., 1997, p. 775-780Conference paper, Published paper (Refereed)
Abstract [en]

The vacancy model for impurity vacancy defects in semiconductors assumes that the ground and low energy excited states are derivable from the four sp3-hybrid orbitals on the atoms bordering the vacancy. There are many cases where this model works but we describe here a counter-example concerning the lowest excited state of the [V-N3] defect in diamond. It is shown that a shallow electron trap, localised outside the vacancy, is involved in the first excited state and responsible for the N2 and N4 optical bands associated with this defect.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 1997. p. 775-780
Series
Materials Science Forum, ISSN 0255-5476 ; 258-263
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-30284DOI: 10.4028/www.scientific.net/MSF.258-263.775Local ID: 40a78d60-f780-11dd-a85e-000ea68e967bOAI: oai:DiVA.org:ltu-30284DiVA, id: diva2:1003511
Conference
International Conference on Defects in Semiconductors : 21/07/1997 - 25/07/1997
Note
Godkänd; 1997; 20090210 (andbra)Available from: 2016-09-30 Created: 2016-09-30 Last updated: 2017-11-25Bibliographically approved

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