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Reconfigurations and diffusion of trivacancy in silicon
University of Manchester.
University of Manchester.
University of Manchester.
Scientific-Practical Materials Research Center of NAS of Belarus.
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2012 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 107, no 15, p. 2974-2977Article in journal (Refereed) Published
Abstract [en]

Disappearance of the divacancy (V2) and trivacancy (V3) complexes upon isochronal and isothermal annealing of electron irradiated Si:O crystals has been studied by means of deep level transient spectroscopy. The annealing studies have shown that the V2 and V3 defects are mobile in Si at T>200 °C and in oxygen-rich material are trapped by interstitial oxygen atoms so resulting in the appearance of V2O and V3O defects. The activation energies for diffusion of the V2 and V3 centers have been determined. Density functional modeling calculations have been carried out to investigate the migration and reorientation mechanisms of V3 in large silicon supercells. It is proposed that these comprise a sequence of transformations between V3(D3) and V3(C2v) configurations.

Place, publisher, year, edition, pages
2012. Vol. 107, no 15, p. 2974-2977
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-31091DOI: 10.1016/j.physb.2011.08.001ISI: 000305790800040Scopus ID: 2-s2.0-84862013445Local ID: 527acf50-fe77-4686-9bdd-15a473a70b4fOAI: oai:DiVA.org:ltu-31091DiVA, id: diva2:1004321
Conference
International Conference on Defects in Semiconductors : 18/06/2011 - 22/06/2011
Note
Validerad; 2012; 20110808 (ysko); Konferensartikel i tidskriftAvailable from: 2016-09-30 Created: 2016-09-30 Last updated: 2018-07-10Bibliographically approved

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Rayson, Mark

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