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Transition metal oxide-diamond interfaces for electron emission applications
School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne.
School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne.
School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne.
School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne.
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2013 (English)In: Silicon carbide and related materials 2012: selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2 - 6, 2012, St. Petersburg, Russian Federation / [ed] Alexander A. Lebedev; Sergey Yu Davydov; Pavel A. Ivanov; Mikhail E. Levinshtein, Durnten-Zurich: Trans Tech Publications Inc., 2013, p. 761-764Conference paper, Published paper (Refereed)
Abstract [en]

Diamond surfaces with suitable adsorbed chemical species can exhibit both negative and positive electron affinities, arising from the complex electrostatic interplay between adsorbates and surface carbon atoms of diamond lattice. We present the results of density functional calculations into the energetics and the electron affinity of diamond (100) surfaces terminated with the oxides of selected transition metals. We find that for a correct stoichiometry, oxides of transition metals, such as Ti and Zn, exhibit a large negative electronic affinity of around 3 eV. The desorption of transition metal oxides is found to be highly endothermic. We therefore propose that transition metal oxides are promising for the surface coating of diamond-based electron emitters, as these exhibit higher thermal stability in comparison to the commonly used Cs-O termination, while retaining the advantage of inducing a large negative electron affinity

Place, publisher, year, edition, pages
Durnten-Zurich: Trans Tech Publications Inc., 2013. p. 761-764
Series
Materials Science Forum, ISSN 0255-5476 ; 740-742
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-31100DOI: 10.4028/www.scientific.net/MSF.740-742.761ISI: 000319785500181Scopus ID: 84874086291Local ID: 529c0e64-f9bd-4b2f-9555-4227a5400896ISBN: 9783037856246 (print)OAI: oai:DiVA.org:ltu-31100DiVA, id: diva2:1004330
Conference
European Conference on Silicon Carbide and Related Materials : 02/09/2012 - 06/09/2012
Note
Validerad; 2013; 20130301 (andbra)Available from: 2016-09-30 Created: 2016-09-30 Last updated: 2018-07-10Bibliographically approved

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Rayson, Mark

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