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Peierls barriers and core properties of partial dislocations in 4H-SiC
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
2006 (English)In: Silicon carbide and related materials : [ICSCRM 2005]: proceedings of the International Conference on Silicon Carbide and Related Materials, Pittsburgh, Pennsylvania, USA, September 18-23, 2005 / [ed] Robert P. Devaty; David J. Larkin; Stephen E. Saddow, Stafa-Zuerich: Trans Tech Publications Inc., 2006, Vol. 2, p. 359-362Conference paper, Published paper (Refereed)
Abstract [en]

First-principles calculations are used to investigate the partial dislocations in 4H-SiC. We show that the stability of the dislocation cores and the Peierls barriers of the first kind are charge-state dependent. In intrinsic bulk the partials are stable in the neutral asymmetric reconstructions. These reconstructions have no deep states and are characterized by high Peierls barriers. In strongly doped regime the symmetric reconstructions can become more stable. These reconstructions are always electrically active with a half filled band across the band gap. In particular the symmetric reconstructions of the 30° partial have a lower Peierls barriers than the respective asymmetric ones and could be the cause of the 1.8 eV electroluminescence peak observed under carrier injection conditions.

Place, publisher, year, edition, pages
Stafa-Zuerich: Trans Tech Publications Inc., 2006. Vol. 2, p. 359-362
Series
Materials Science Forum, ISSN 0255-5476 ; 527-529
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-31935Local ID: 6427dc00-c28e-11db-9ea3-000ea68e967bISBN: 0-87849-425-1 (print)ISBN: 978-0-87849-425-5 (print)OAI: oai:DiVA.org:ltu-31935DiVA, id: diva2:1005169
Conference
International Conference on Silicon Carbide and Related Materials : 18/09/2005 - 23/09/2005
Note
Validerad; 2006; 20070222 (kani)Available from: 2016-09-30 Created: 2016-09-30 Last updated: 2017-11-25Bibliographically approved

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http://www.scientific.net/0-87849-425-1/359/

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Öberg, Sven

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
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  • vancouver
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