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Substitutional carbon in Ge and Si1-xGex
Institute of Physics and Astronomy, University of Aarhus.
Institute of Physics and Astronomy, University of Aarhus.
Institute of Physics and Astronomy, University of Aarhus.
Institute of Physics and Astronomy, University of Aarhus.
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1997 (English)In: Defects in semiconductors: proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997 / [ed] Gordon Davies, Trans Tech Publications Inc., 1997, p. 97-102Conference paper, Published paper (Refereed)
Abstract [en]

In the present work, carbon is implanted into monocrystalline Ge and into relaxed epitaxial MBE-grown Si1-xGex. The samples are studied with infrared absorption spectroscopy along with ion-channeling studies on the Ge samples. Finally, ab-initio local density functional cluster theory is applied to calculate the structure and the local vibrational modes of substitutional carbon, Cs, in Ge. After implantation of 12C+ in Ge at room temperature and subsequent annealing at 350°C, a sharp absorption line is observed at 531 cm-1. By isotope substitution, it is concluded that the 531 cm-1 line represents a local vibrational mode of a single carbon atom. From ion-channeling measurements on samples annealed at 450°C, it is found that 31±3 % of the carbon atoms are located at substitutional sites. The population of the substitutional site and the intensity of the 531 cm-1 mode have identical annealing behavior and it is concluded that the 531 cm-1 mode is the three-dimensional T2 stretch mode of Cs in Ge. The calculated frequency and isotope shift for this mode are in good agreement with the observations. In Si0.65Ge0.35, two broad absorption lines are observed at ∼551 and ∼592 cm-1 after implantation of 12C+ and subsequent annealing at 550°C. From measurements on samples implanted with 13C+ and coimplanted with 12C+ and 13C+ we conclude that these lines represent local vibrational modes of defects containing a single carbon atom. In 13C+ implanted Si1-xGex samples that contain 15 to 50 % Ge a number of modes are observed in a frequency range from ∼510 to ∼610 cm-1, i.e., in the range of Cs in Ge and in Si. From the experimental findings it is concluded that substitutional carbon in Si1-xGex binds to both Si and Ge.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 1997. p. 97-102
Series
Materials Science Forum, ISSN 0255-5476 ; 258-263
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-32423DOI: 10.4028/www.scientific.net/MSF.258-263.97Local ID: 6eb64660-f1ef-11dd-ae0d-000ea68e967bOAI: oai:DiVA.org:ltu-32423DiVA, id: diva2:1005657
Conference
International Conference on Defects in Semiconductors : 21/07/1997 - 25/07/1997
Note
Godkänd; 1997; 20090203 (andbra)Available from: 2016-09-30 Created: 2016-09-30 Last updated: 2017-11-25Bibliographically approved

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