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Structural and electrical properties of threading dislocations in GaN
Department of Physics, University of Exeter.
Theoretische Physik III, TU Chemnitz.
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1997 (English)In: Defects in semiconductors: proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997 / [ed] Gordon Davies, Trans Tech Publications Inc., 1997, 1203-1210 p.Conference paper (Refereed)
Abstract [en]

The atomic structures and electrical properties for threading screw and threading edge dislocations of wurtzite GaN are calculated within the local-density approximation. Both dislocations are electrically inactive with a band gap free from deep levels. These results are understood to arise from relaxed core structures which are similar to (1010) surfaces. The threading screw dislocations are found to be stable with an open-core whereas the threading edge dislocations possess filled cores.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 1997. 1203-1210 p.
Materials Science Forum, ISSN 0255-5476 ; 258-263
Research subject
Scientific Computing
URN: urn:nbn:se:ltu:diva-35189DOI: 10.4028/ ID: 99d763b0-f843-11dd-a5fb-000ea68e967bOAI: diva2:1008441
International Conference on Defects in Semiconductors : 21/07/1997 - 25/07/1997
Godkänd; 1997; 20090211 (andbra)Available from: 2016-09-30 Created: 2016-09-30Bibliographically approved

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