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Theoretical study of cubic polytype inclusions in 4H-SiC
Department of Physics and Measurement Technology, Linköping University.
Department of Physics and Measurement Technology, Linköping University.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
Department of Physics, University of Newcastle.
2002 (English)In: Silicon carbide and related materials: ICSCRM2001 : proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28 - November 2, 2001 / [ed] S. Yoshida, Zürich-Uetikon: Trans Tech Publications Inc., 2002, Vol. 1, p. 533-6Conference paper, Published paper (Refereed)
Abstract [en]

First-principles density-functional calculations of the band structure and wave functions around narrow 3C-like inclusions in 4H-SiC have been performed. 3C-like inclusions of various thicknesses, corresponding to two, three, and four stacking faults in neighbouring basal planes, have been investigated. The results for the number of bound states in the inclusion, their energies, and wave functions are well described by a simple one-dimensional quantum-well square potential. The quantum-well property of these inclusions suggests that 3C-like regions in 4H-SiC are efficient planar traps for conduction band electrons

Place, publisher, year, edition, pages
Zürich-Uetikon: Trans Tech Publications Inc., 2002. Vol. 1, p. 533-6
Series
Materials Science Forum, ISSN 0255-5476 ; 389
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-35882Local ID: a97f7050-c73f-11db-98d9-000ea68e967bISBN: 0-87849-894-X (print)OAI: oai:DiVA.org:ltu-35882DiVA, id: diva2:1009136
Conference
International Conference on Silicon Carbide and Related Materials : 28/10/2001 - 02/11/2001
Note
Validerad; 2002; 20070228 (kani)Available from: 2016-09-30 Created: 2016-09-30 Last updated: 2017-11-25Bibliographically approved

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CiteExportLink to record
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