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Partial dislocations under forward bias in SiC
University of Sussex.
University of Sussex.
University of Sussex.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
2007 (English)In: Silicon carbide and related materials 2006: ECSCRM 2006 ; proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006 / [ed] Nick Wright; C. Mark Johnson, Stafa-Zürich: Trans Tech Publications Inc., 2007, p. 279-282Conference paper, Published paper (Refereed)
Abstract [en]

First-principles calculations are used to investigate the partial dislocations in 4H-SiC. We have shown that the Peierls barriers are strongly dependent on the dislocation core structures. Our results have revealed that the asymmetric reconstruction does not possess midgap states while the symmetric reconstructions, characterized by dangling bond on like atoms along the dislocation line, are always electrically active. We suggested that under forward bias, the free energies of the symmetric reconstructions are dynamically lowered by continuous electron-hole transitions between the respective deep levels and valence/conduction bands.

Place, publisher, year, edition, pages
Stafa-Zürich: Trans Tech Publications Inc., 2007. p. 279-282
Series
Materials Science Forum, ISSN 0255-5476 ; 556-557
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-37232DOI: 10.4028/www.scientific.net/MSF.556-557.279Local ID: b32de6d0-3ba7-11dd-8e42-000ea68e967bOAI: oai:DiVA.org:ltu-37232DiVA, id: diva2:1010730
Conference
European Conference on Silicon Carbide and Related Materials : 03/09/2006 - 07/09/2006
Note
Validerad; 2007; 20080616 (ysko)Available from: 2016-10-03 Created: 2016-10-03 Last updated: 2017-11-25Bibliographically approved

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