Local vibrational modes of weakly bound O-H complexes in SI
1997 (English)In: Defects in semiconductors: proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997 / [ed] Gordon Davies, Trans Tech Publications Inc., 1997, 391-398 p.Conference paper (Refereed)
Local vibrational modes of two oxygen-hydrogen complexes have been identified with infrared absorption spectroscopy. Samples of intrinsic silicon and samples doped with 16O or 18O isotopes were implanted with protons and deuterons at ∼20 K. After the implantation, infrared absorbance spectra were measured at 8 K on unannealed samples. An oxygen mode at 1077 cm-1 and a hydrogen mode at 1879 cm-1, which originate from the same defect OHI were observed in the as-implanted samples. Heat-treatment at 200 K produced a new center OHII with modes at 1028 and 1830 cm-1. OHI anneals out at ∼130 K while OHII is stable up to ∼240 K. OHI and OHII are tentatively identified with two complexes of interstitial oxygen and bond-centred hydrogen. Ab initio theory was applied to calculate the structure and local modes of three such complexes. The results qualitatively support our tentative assignments.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 1997. 391-398 p.
Materials Science Forum, ISSN 0255-5476 ; 258-263
Research subject Scientific Computing
IdentifiersURN: urn:nbn:se:ltu:diva-37440DOI: 10.4028/www.scientific.net/MSF.258-263.391Local ID: b76ffc10-f36c-11dd-a323-000ea68e967bOAI: oai:DiVA.org:ltu-37440DiVA: diva2:1010938
International Conference on Defects in Semiconductors : 21/07/1997 - 25/07/1997
Godkänd; 1997; 20090205 (andbra)2016-10-032016-10-03Bibliographically approved