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Oxidation studies of silicon oxynitride using X-ray photoelectron spectroscopy and transmission electron microscopy
Stevens Institute of Technology, Hoboken, NJ.
Stevens Institute of Technology, Hoboken, NJ.
Naval Research Laboratory, Washington, DC.
Luleå tekniska universitet.
1996 (English)In: Covalent ceramics III: science and technology of non-oxides ; symposium held November 27 - 29, 1995, Boston, Massachusetts, U.S.A [at the 1995 MRS Fall Meeting] / [ed] Aloysius F. Hepp, Pittsburgh, Pa: Materials Research Society, 1996, 393-398 p.Conference paper (Refereed)
Abstract [en]

Silicon oxynitride (Si{sub 2}N{sub 2}O) ceramics were oxidized in 1 atm dry oxygen at 1,100 C and 1,300 C. The oxidized samples were studied using x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy in conjunction with energy dispersive x-ray analysis. TEM characterization revealed the chemical abruptness of the SiO{sub 2} and Si{sub 2}N{sub 2}O interface. Further investigation indicated the inclusions of residual SiO{sub 2} in Si{sub 2}N{sub 2}O, which contributed to the broad XPS elemental distribution in the oxide-substrate interface region.

Place, publisher, year, edition, pages
Pittsburgh, Pa: Materials Research Society, 1996. 393-398 p.
Series
, Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 410
Research subject
Material Mechanics
Identifiers
URN: urn:nbn:se:ltu:diva-39325Local ID: e04cbb40-fcca-11db-b816-000ea68e967bISBN: 1-558-99313-4OAI: oai:DiVA.org:ltu-39325DiVA: diva2:1012836
Conference
MRS Fall Meeting : 27/11/1995 - 29/11/1995
Note
Godkänd; 1996; 20070507 (cira)Available from: 2016-10-03 Created: 2016-10-03Bibliographically approved

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