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Structure and electrical activity of rare-earth dopants in selected III-Vs
School of Physics, University of Exeter.
School of Physics, University of Exeter.
School of Physics, University of Exeter.
Theoretische Physik, Universität Paderborn.
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2003 (English)In: Materials Research Society Symposium Proceedings, 2003, Vol. 798, 471-476 p.Conference paper (Refereed)
Abstract [en]

Density functional theory is used to investigate Eu, Er and Tm rare earth (RE) impurities in GaAs, GaN and AlN. The most stable site is when the RE is located at a group III substitutional site but in GaN and GaAs these defects do not then possess any gap levels, unlike AlN. RE-V$_\mathrm{N}$ defects in GaN are shown to possess levels which could act as traps for excitons. The interaction of oxygen with substitutional REs is also considered.

Place, publisher, year, edition, pages
2003. Vol. 798, 471-476 p.
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-39792Local ID: eabc2e20-1377-11dd-b7d2-000ea68e967bOAI: oai:DiVA.org:ltu-39792DiVA: diva2:1013310
Conference
GaN and Related Alloys : 01/12/2003 - 05/12/2003
Note
Godkänd; 2003; 20080426 (ysko)Available from: 2016-10-03 Created: 2016-10-03Bibliographically approved

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