Change search
ReferencesLink to record
Permanent link

Direct link
The trivacancy and trivacancy-oxygen family of defects in silicon
Photon Science Institute, University of Manchester.
Photon Science Institute, University of Manchester.
Photon Science Institute, University of Manchester.
State Scientific and Production Association, Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus.
Show others and affiliations
2014 (English)Conference paper, Meeting abstract (Refereed)
Abstract [en]

The data obtained recently from combined deep-level-transient spectroscopy (DLTS), local vibrational mode (LVM) spectroscopy and ab-initio modeling studies on structure, electronic properties, local vibrational modes, reconfiguration and diffusion paths and barriers for trivacancy (V3) and trivacancy-oxygen (V3O) defects in silicon are summarized. New experimental results on the introduction rates of the divacancy (V2) and trivacancy upon 4 MeV electron irradiation and on the transformation of V3 from the fourfold coordinated configuration to the (110) planar one upon minority carrier injection are reported. Possible mechanisms of the transformation are considered and discussed.

Place, publisher, year, edition, pages
2014. Vol. 205-206, 181-190 p.
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-39879DOI: 10.4028/www.scientific.net/SSP.205-206.181Local ID: ecd2b91b-0a12-49bd-9839-0a52d160a41dOAI: oai:DiVA.org:ltu-39879DiVA: diva2:1013398
Conference
Gettering and Defect Engineering in Semiconductor Technology : 22/09/2013 - 27/09/2013
Note
Validerad; 2014; 20131115 (andbra)Available from: 2016-10-03 Created: 2016-10-03Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Rayson, Mark
By organisation
Mathematical Science

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 5 hits
ReferencesLink to record
Permanent link

Direct link