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The trivacancy and trivacancy-oxygen family of defects in silicon
Photon Science Institute, University of Manchester.
Photon Science Institute, University of Manchester.
Photon Science Institute, University of Manchester.
State Scientific and Production Association, Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus.
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2014 (English)In: Solid State Phenomena, ISSN 1012-0394, E-ISSN 1662-9779, Vol. 205-206, 181-190 p.Article in journal (Refereed) Published
Abstract [en]

The data obtained recently from combined deep-level-transient spectroscopy (DLTS), local vibrational mode (LVM) spectroscopy and ab-initio modeling studies on structure, electronic properties, local vibrational modes, reconfiguration and diffusion paths and barriers for trivacancy (V3) and trivacancy-oxygen (V3O) defects in silicon are summarized. New experimental results on the introduction rates of the divacancy (V2) and trivacancy upon 4 MeV electron irradiation and on the transformation of V3 from the fourfold coordinated configuration to the (110) planar one upon minority carrier injection are reported. Possible mechanisms of the transformation are considered and discussed.

Place, publisher, year, edition, pages
2014. Vol. 205-206, 181-190 p.
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-39879DOI: 10.4028/www.scientific.net/SSP.205-206.181Local ID: ecd2b91b-0a12-49bd-9839-0a52d160a41dOAI: oai:DiVA.org:ltu-39879DiVA: diva2:1013398
Conference
Gettering and Defect Engineering in Semiconductor Technology : 22/09/2013 - 27/09/2013
Note
Validerad; 2014; 20131115 (andbra); Konferensartikel i tidskriftAvailable from: 2016-10-03 Created: 2016-10-03Bibliographically approved

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