The trivacancy and trivacancy-oxygen family of defects in silicon
2014 (English)Conference paper, Meeting abstract (Refereed)
The data obtained recently from combined deep-level-transient spectroscopy (DLTS), local vibrational mode (LVM) spectroscopy and ab-initio modeling studies on structure, electronic properties, local vibrational modes, reconfiguration and diffusion paths and barriers for trivacancy (V3) and trivacancy-oxygen (V3O) defects in silicon are summarized. New experimental results on the introduction rates of the divacancy (V2) and trivacancy upon 4 MeV electron irradiation and on the transformation of V3 from the fourfold coordinated configuration to the (110) planar one upon minority carrier injection are reported. Possible mechanisms of the transformation are considered and discussed.
Place, publisher, year, edition, pages
2014. Vol. 205-206, 181-190 p.
Research subject Scientific Computing
IdentifiersURN: urn:nbn:se:ltu:diva-39879DOI: 10.4028/www.scientific.net/SSP.205-206.181Local ID: ecd2b91b-0a12-49bd-9839-0a52d160a41dOAI: oai:DiVA.org:ltu-39879DiVA: diva2:1013398
Gettering and Defect Engineering in Semiconductor Technology : 22/09/2013 - 27/09/2013
Validerad; 2014; 20131115 (andbra)2016-10-032016-10-03Bibliographically approved