Electronic properties of stacking faults in 15R-SiC
2003 (English)In: Silicon carbide and related materials: ECSCRM 2002 : proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden, Uetikon-Zuerich: Trans Tech Publications Inc., 2003, 531-534 p.Conference paper (Refereed)
A first-principles calculation of stacking faults in 15R-SiC is reported. All the geometrically distinguishable stacking faults which can be introduced by the glide of partial dislocations in (0001)-basal planes are investigated: there exist as many as five different stacking faults in 15R-SiC. Electronic properties and stacking fault energies of these extended defects are studied based on the density functional theory in the local density approximation. Stacking fault energies are also calculated using the axial next nearest neighbor Ising (ANNNI) model.
Place, publisher, year, edition, pages
Uetikon-Zuerich: Trans Tech Publications Inc., 2003. 531-534 p.
Materials Science Forum, ISSN 0255-5476 ; 433-436
Research subject Scientific Computing
IdentifiersURN: urn:nbn:se:ltu:diva-40534Local ID: fb609b30-c738-11db-98d9-000ea68e967bISBN: 0-87849-920-2 (print)OAI: oai:DiVA.org:ltu-40534DiVA: diva2:1014056
European Conference on Silicon Carbide and Related Materials : 02/09/2002 - 05/09/2002
Validerad; 2003; 20070228 (kani)2016-10-032016-10-03Bibliographically approved