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Electronic properties of stacking faults in 15R-SiC
Department of Physics, Linköping University.
Department of Physics, Linköping University.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
Department of Physics, University of Newcastle.
2003 (English)In: Silicon carbide and related materials: ECSCRM 2002 : proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden, Uetikon-Zuerich: Trans Tech Publications Inc., 2003, 531-534 p.Conference paper, Published paper (Refereed)
Abstract [en]

A first-principles calculation of stacking faults in 15R-SiC is reported. All the geometrically distinguishable stacking faults which can be introduced by the glide of partial dislocations in (0001)-basal planes are investigated: there exist as many as five different stacking faults in 15R-SiC. Electronic properties and stacking fault energies of these extended defects are studied based on the density functional theory in the local density approximation. Stacking fault energies are also calculated using the axial next nearest neighbor Ising (ANNNI) model.

Place, publisher, year, edition, pages
Uetikon-Zuerich: Trans Tech Publications Inc., 2003. 531-534 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 433-436
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-40534Local ID: fb609b30-c738-11db-98d9-000ea68e967bISBN: 0-87849-920-2 (print)OAI: oai:DiVA.org:ltu-40534DiVA: diva2:1014056
Conference
European Conference on Silicon Carbide and Related Materials : 02/09/2002 - 05/09/2002
Note
Validerad; 2003; 20070228 (kani)Available from: 2016-10-03 Created: 2016-10-03 Last updated: 2017-11-25Bibliographically approved

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