An active MOS diode with V th-cancellation for RFID rectifiers
2012 (English)In: 2012 IEEE International Conference on RFID (RFID 2012): Orlando, Florida, USA, 3 - 5 April 2012, Piscataway, NJ: IEEE Communications Society, 2012, 54-57 p.Conference paper (Refereed)
An active MOS diode for low voltage and low power RFID rectifiers is presented. The diode is based on the technique with internal threshold cancellation (ITC) for MOS diodes and uses a simple control scheme to minimize the diode reverse leakage so that full threshold cancellation is achieved. A theoretical background that illustrates the limitations with the ITC diode and a detailed presentation of the proposed diode with a short design procedure is included. The proposed diode is implemented in AMS 0.35 μm CMOS and simulated in Cadense Spectre in a single diode rectifier. With a diode voltage ranging from 50 to 100 mV, the proposed diode simultaneously demonstrates improved voltage and power conversion efficiency of more than 20 % each for frequencies up to 1 MHz, as compared to the MOS diode with internal threshold cancellation.
Place, publisher, year, edition, pages
Piscataway, NJ: IEEE Communications Society, 2012. 54-57 p.
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Industrial Electronics
IdentifiersURN: urn:nbn:se:ltu:diva-40549DOI: 10.1109/RFID.2012.6193056Local ID: fb95c50a-3699-4164-a506-b55323da7c7aISBN: 9781467303286 (print)OAI: oai:DiVA.org:ltu-40549DiVA: diva2:1014071
Annual IEEE International Conference on RFID : 03/04/2012 - 05/04/2012
Godkänd; 2012; 20120621 (andbra)2016-10-032016-10-03Bibliographically approved