Improved efficiency in the CMOS cross-connected bridge rectifier for RFID applications
2011 (English)In: Proceedings of the 18th International Conference Mixed Design of Integrated Circuits and Systems: MIXDES 2011; Gliwice; 16 June 2011 through 18 June 2011, Piscataway, NJ: IEEE Communications Society, 2011, 334-339 p.Conference paper (Refereed)
A bridge rectifier based on the cross-connected NMOS-PMOS bridge that avoids the inherent degradation of power conversion efficiency for increasing input levels is presented. Instead of PMOS switches, the proposed rectifier uses diode-connected MOS transistors with static threshold cancellation and minimised diode reverse leakage. With a simple and power efficient circuit solution the new rectifier allows for low-power, passive tag implementation in standard CMOS for both LF and HF RFID applications. Simulation results of the proposed rectifier in a 0.35 µm CMOS process show a power conversion efficiency over 60 % for all input levels above 0.75 V with a 100 kΩ load and an input signal frequency of 13.56 MHz. The simulated DC output voltage at the same conditions is approximately Vin - 0.3 V. A model for the PCE of the new rectifier that includes the impact of the Vth-generator is developed and compared with simulated results.
Place, publisher, year, edition, pages
Piscataway, NJ: IEEE Communications Society, 2011. 334-339 p.
Research subject Industrial Electronics
IdentifiersURN: urn:nbn:se:ltu:diva-40640Local ID: fd53b63d-f5ec-4acb-a429-35d6a9b3c690ISBN: 978-83-932075-0-3 (print)ISBN: 978-83-932075-1-0 (electronic)OAI: oai:DiVA.org:ltu-40640DiVA: diva2:1014161
International Conference Mixdes Design of Integrated Circuits and Systems : 16/06/2011 - 18/06/2011
Godkänd; 2011; Bibliografisk uppgift: Article number 6015936; 20110916 (ysko)2016-10-032016-10-03Bibliographically approved