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Ferroelectroc Na0.5K0.5NbO3 films for voltabe tunable microwave devices
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2000 (English)In: Materials Issues for Tunable RF and Microwave Devices II : MRS fall conference, Materials Research Society, 2000, 19-24 p.Conference paper (Refereed)
Abstract [en]

Single phase Na0.5K0.5NbO3 (NKN) thin films have been pulsed laser deposited on Al2O3(01-12), LaAlO3(001), and MgO(001) single crystal substrates as well as onto SiO2/Si(001) wafers to demonstrate films feasibility for voltage tunable microwave device applications. NKN film texture has been found to be quite different on three different single crystals: highly c-axis oriented on Al2O3, "cube-on-cube" epitaxial quality on LaAlO3, bi-axial textures on MgO, while NKN films grown on Si substrate with various thickness of SiO2 buffer layer possess highly c-axis oriented quadrupled structure. NKN film interdigital capacitors fabricated onto single crystal oxide substrates showed tunability of 30-40 % and dissipation factor of 0.01-0.02 at 1 MHz and applied electric field of 100kV/cm. Microwave frequency measurements for NKN/Si varactors yield 13 % tunability and dielectric loss tan delta as low as 0.012 at 40 GHz under 200 kV/cm applied bias.

Place, publisher, year, edition, pages
Materials Research Society, 2000. 19-24 p.
MRS proceedings, 656E
Research subject
Engineering Materials
URN: urn:nbn:se:ltu:diva-40701Local ID: fee1e080-28d3-11de-bce5-000ea68e967bOAI: diva2:1014222
MRS Fall Conference : 27/11/2000 - 01/12/2000

Godkänd; 2000; Bibliografisk uppgift: Titel: Materials Issues for Tunable RF and Microwave Devices II; 20090414 (cira)

Available from: 2016-10-03 Created: 2016-10-03 Last updated: 2016-10-12Bibliographically approved

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