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Simulations of dislocations in silicon
2002 (English)Independent thesis Advanced level (professional degree), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

The topic of this thesis is simulations of dislocations in the elemental semiconductor silicon. The self-consistent unit cell method is used in the calculations. The goal is to examine how different stacking of the unit cells affects the total energy of the system. Two different atomic models are used: the Keating model and the bond-charge model. Calculations were done on different lengths and heights of the unit cell that contained a dipole of two 90° partial dislocations. The findings of this thesis are that using the Keating model, the energetically most stable stacking for the unit cells is achieved when they are stacked directly on top of each other. For a specific length given to the unit cell, the elastic energy decreases when the height increases. The bond-charge model gives almost the same result as the Keating model for moderate lengths of the unit cells. For long unit cells, it is energetically more favourable to stack the unit cells analogous to how one builds a brick wall.

Place, publisher, year, edition, pages
Keyword [en]
Technology, Solid state physics, dislocations
Keyword [sv]
URN: urn:nbn:se:ltu:diva-46079ISRN: LTU-EX--02/345--SELocal ID: 3b799c42-7bc7-49f9-b95f-e209393d6d71OAI: diva2:1019390
Subject / course
Student thesis, at least 30 credits
Educational program
Engineering Physics, master's level
Validerat; 20101217 (root)Available from: 2016-10-04 Created: 2016-10-04Bibliographically approved

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