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Electron Diffusion in Charged Coupled Devices
1998 (English)Independent thesis Advanced level (professional degree), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

In this master's thesis, made at the European Southern Observatory (ESO), electron diffusion in charge coupled devices, CCDs, was examined. Electron diffusion occurs when the electrons are spread on the CCD and not captured in the same pixel as where they are created. Here, to examine the electron diffusion, a light beam the size of one tenth of a pixel was focused on the CCD. Even though only a small part of the pixel was illuminated a signal could be detected in the adjacent pixels. The pixels were scanned with the small spot, both in x- and y-direction. The goal of the experiment was to measure the pixel response at two different wavelengths and at different bias voltages. The conclusions made from the measurements were the following. 1. Tests were made for the wavelengths 400 nm and 600 nm. The electron diffusion was less for 600 nm than 400 nm. 2. The electron diffusion was found different depending on the sub-pixel position. Close to the borders the diffusion became greater than in the central parts of the pixel. 3. By changing the bias voltages the electron diffusion could be approved. But lower electron diffusion leads to a higher dark current.

Place, publisher, year, edition, pages
Keyword [en]
Technology, CCD, electron diffusion, optics, pixel
Keyword [sv]
URN: urn:nbn:se:ltu:diva-46232ISRN: LTU-EX--98/336--SELocal ID: 3e03b9e6-abdd-45d2-b556-118d0e7cadcbOAI: diva2:1019545
Subject / course
Student thesis, at least 30 credits
Educational program
Civil Engineering programmes 1997-2000, master's level
Validerat; 20101217 (root)Available from: 2016-10-04 Created: 2016-10-04Bibliographically approved

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