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Microstructural analysis of TiN/SiN multilayer films deposited with reactive magnetron sputtering
2003 (English)Independent thesis Advanced level (professional degree), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

The market for thin film applications has grown during resent years. By coating a product with a thin film that has the correct properties the result will be an increase in performance for that product. One method to improve the mechanical properties of a film is to grow a multilayer with alternating layers of two different materials. In this work multilayer films consisting of crystalline titanium nitride and amorphous silicon nitride has been grown onto single silicon crystal wafers with reactive magnetron sputtering. Pure TiN and SiNx films were also grown. By choosing one crystalline and one amorphous material the idea is to force the TiN to renucleate in each new layer. This occurs because the SiNx does not offer a crystal structure for the TiN to continue its growth on. In the same process as choosing the thickness of the TiN layer one also sets the limit for how large the grains can grow. By making thinner layers the grains get smaller and that results in a harder material. The layered structure also makes it more difficult for dislocations to move through the material and thereby the hardness is increased. The hardness of the films was determined by nanoindentation and the result was 18 GPa for the softest film and 32 GPa for the hardest. In addition the microstructure was examined. The layering of the film and preferred orientation of the TiN were studied using x-ray diffraction. The multilayer films with the smaller TiN layers preferred a (200) direction whereas as for thicker layers the (111) direction appeared. Transmission electron microscopy was also used to view the condition of the multilayers.

Place, publisher, year, edition, pages
2003.
Keyword [en]
Technology, Multilayers, reactive magnetron sputtering, thin films, PVD
Keyword [sv]
Teknik
Identifiers
URN: urn:nbn:se:ltu:diva-48656ISRN: LTU-EX--03/173--SELocal ID: 6155e496-de1c-42d8-9a77-12ee90fa84fcOAI: oai:DiVA.org:ltu-48656DiVA: diva2:1021999
Subject / course
Student thesis, at least 30 credits
Educational program
Engineering Physics, master's level
Examiners
Note
Validerat; 20101217 (root)Available from: 2016-10-04 Created: 2016-10-04Bibliographically approved

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